Part Number | IPD78CN10NGBUMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Broadcom Limited |
Description | MOSFET N-CH 100V 13A TO252-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 12µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 716pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 31W (Tc) |
Rds On (Max) @ Id, Vgs | 78 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD78CN10NGBUMA1
BROADCON
16000
1.16
Finestock Electronics HK Limited
IPD78CN10NGBUMA1
BROHDCOM
18650
2.11
Fairstock HK Limited
IPD78CN10NGBUMA1
BROADCM
6267
3.06
Dedicate Electronics (HK) Limited
IPD78CN10NGBUMA1
BROADCOMM
18000
4.01
MY Group (Asia) Limited
IPD78CN10NGBUMA1
Broadcom Inc
5000
4.96
Shenzhenshi Zhongyiyingtong Technology Co.,Ltd